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HA22012
GaAs MMIC Low Noise Amplifier for Micro Wave Application
ADE-207-217 (Z) 1st. Edition July 1996 Features
* * * * * * Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.9 dB typ.) High power gain (13.5 dB typ.) Built-in input and output matching circuits (50) Small surface mount package (MPAK-5)
Outline
MPAK--5
HA22012
Absolute Maximum Ratings (Ta = 25C)
Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Symbol Vdd Idd Pd Tch Tstg Topr Ratings 5 6 100 150 -55 to +150 -20 to +70 Unit V mA mW C C C
Electrical Characteristics (Ta = 25C, Vdd = 3V)
Item Quiescent current Power gain Noise figure Symbol Idd PG NF Min 1.5 11.5 -- Typ 3 13.5 1.9 Max 5.5 16 2.5 Unit mA dB dB Test Conditions No signal f = 1.9 GHz f = 1.9 GHz Pin
Typical Performance (Ta = 25C, Vdd = 3V)
Item VSWR (input) VSWR (output) 3rd order intermodulation distortion Symbol VSWR in VSWR out IM3 Typ 1.6 1.6 58 Unit -- -- dB Test Conditions f = 1.9 GHz f = 1.9 GHz f = 1.9 GHz, UD = 1.9006 Ghz Pin = -30 dBm Pin 4 1
2
HA22012
Block Diagram in 4 3 2 Vdd 5 1 Cs 100pF GND
out
100pF
3
HA22012
Pin Arrangement
GBF
Monthly code (variable) Mark type
1
5
GBF
Pin name RF out GND Cs RF in Vdd Function RF output Ground RF input Power supply
2
3
4
Top View
Pin No. 1 2 3 4 5
Bypath capacitor (>100 pF)
4
HA22012
Pattern Layout
scale 4/1 :0.5mm :0.3mm
Front Side view of PCB Pattern
scale 4/1 : Capacitor (100pF) cs GBF RF in
Vdd
RF out
ER=4.8 H=1mm
Front Side view of Part Layout
5
HA22012
Main Characteristics
Power Gain vs. Frequency 4 Vdd = 3 V Ta = +25C 15 Noise Figure NF (dB) Power Gain PG (dB) 3 Vdd = 3 V Ta = +25C Noise Figure vs. Frequency
20
10
2
5
1
0 1.0
1.5
2.0
2.5
0 1.0
1.5
2.0
2.5
Frequency f (GHz)
Frequency f (GHz)
6
VSWR vs. Frequency Vdd = 3 V Ta = +25C
5
Output Power Pout (dBm)
Output Power, 3rd Order Intermodulation Distortion vs. Input Power 20 Vdd = 3 V f = 1.9 GHz 0 ud = 19006 GHz Ta = +25C -20 Pout im3
VSWR
4 output 3 input 2 1 1.0
-40
-60 -80 -60 -50 -40 -30 -20 -10 Input Power Pin (dBm)
1.5
2.0
2.5
0
10
Frequency f (GHz)
6
HA22012
Power Gain vs. Supply Voltage 20 f = 1.9 GHz Ta = +25C Noise Figure NF (dB) Power Gain PG (dB) 15 3 4 Noise Figure vs. Supply Voltage f = 1.9 GHz Ta = +25C
10
2
5
1
0 2.5
3.0
3.5
4.0
4.5
5.0
0 2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
Supply Voltage Vdd (V)
6
VSWR vs. Supply Voltage f = 1.9 GHz Ta = +25C
5 P1dB, IP3o (dBm)
Pout @ 1dB Gain Compression, 3rd Order Inter-cept Point (out) vs. Supply Voltage 20 f = 1.9 GHz Ta = +25C 15 IP3o 10
VSWR
4
3
5
P1dB
2 1 2.5
output input 3.0 3.5 4.0 4.5 5.0
0 -5 2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
Supply Voltage Vdd (V)
7
HA22012
20 Power Gain vs. Ambient Temperature 4 Vdd = 3 V f = 1.9 GHz 15 Noise Figure NF (dB) Power Gain PG (dB) 3 Vdd = 3 V f = 1.9 GHz Noise Figure vs. Ambient Temperature
10
2
5
1
0 -25
0
25
50
75
0 -25
0
25
50
75
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
6
VSWR vs. Ambient Temperature Vdd = 3 V f = 1.9 GHz
5 P1dB, IP3o (dBm)
Pout @ 1dB Gain Compression, 3rd Order Inter-cept Point (out) vs. Supply Voltage 20 Vdd = 3 V f = 1.9 GHz 15 IP3o 10
VSWR
4
3
5 P1dB 0 -5 -25
2 1 -25
output input 0 25 50 75
0
25
50
75
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
8
HA22012
Quiescent Current vs. Supply Voltage 6 Ta = +25C Quiescent Current Idd (mA) 5 Quiescent Current Idd (mA) 5 6 Vdd = 3 V Quiescent Current vs. Ambient Temperature
4
4
3
3
2 1 2.5
2 1 -25
3.0
3.5
4.0
4.5
5.0
0
25
50
75
Supply Voltage Vdd (V)
Ambient Temperature Ta (C)
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HA22012
Package Dimentions
Unit: mm
0.3
2.9 0.2 1.9 0.95 0.95 0.4 0.1
0.6
1.1--0.1
+ 0.2
0.4 0.1
0.16 --0.06
+ 0.1
0.2 1.6 + 0.1 --
2.8 --0.3
+ 0.2
0 to 0.1
0.4 0.1
0.6
Hitachi code EIAJ JEDEC
MPAK--5
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HA22012
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items.
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HA22012
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to:
Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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